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Modeling of Lateral Migration Mechanism of Holes in 3D NAND Flash Memory Charge Trap Layer during Retention Operation

机译：保留操作期间3D NAND闪存电荷陷阱层中空穴的横向迁移机制建模

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In this paper, we analyzed lateral migration mechanism of holes (LM) in 3D NAND Flash memory during retention operation. Retention characteristics were investigated using Technology Computer-Aided Design (TCAD) simulation and modeled using Weibull cumulative distribution function (WCD). Time-constant (τ) at various temperatures were extracted through the modeled equation. Finally, the activation energy (E_a) of LM was extracted by applying to the Arrhenius equation.

机译：在本文中，我们分析了3D NAND闪存在保留操作过程中空穴（LM）的横向迁移机制。使用技术计算机辅助设计（TCAD）仿真研究保留特性，并使用Weibull累积分布函数（WCD）建模。通过建模方程可提取出各种温度下的时间常数（τ）。最后，激活能量（E \ n _{a \ n）。}

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来源
《2019 Silicon Nanoelectronics Workshop》|2019年|1-2|共2页
会议地点 Kyoto(JP)
作者
Jaeyeol Park; Hyungcheol Shin;
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作者单位

Inter university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University, Gwanak-ro, Gwanak-gu, Seoul, 151-742, Republic of Korea;

Inter university Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University, Gwanak-ro, Gwanak-gu, Seoul, 151-742, Republic of Korea;

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原文格式 PDF
正文语种 eng
中图分类
关键词
DSL; Flash memories; Three-dimensional displays; Mathematical model; Temperature; Computational modeling; Solid modeling;

机译：DSL;闪存;三维显示器;数学模型;温度;计算模型;实体模型;;
入库时间 2022-08-26 14:32:36

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专利

1. Lateral charge migration induced abnormal read disturb in 3D charge-trapping NAND flash memory [J] . Wang Fei, Cao Rui, Kong Yachen, Annales de l'I.H.P . 2020,第5期

机译：横向电荷迁移诱导3D电荷捕获NAND闪存中的异常读取干扰
2. Erratum: 'Lateral charge migration induced abnormal read disturb in 3D charge- trapping NAND flash memory' [Appl. Phys. Express 13, 054002 (2020)] [J] . Wang Fei, Cao Rui, Kong Yachen, Annales de l'I.H.P . 2020,第7期

机译：错误：'横向电荷迁移在3D充电捕获NAND闪存中引起异常读取干扰NAND闪存'[应用。物理。快递13,054002（2020）]
3. Engineering of Si-Rich Nitride Charge-Trapping Layer for Highly Reliable Metal-Oxide-Nitride-Oxide-Semiconductor Type NAND Flash Memory with Multi-Level Cell Operation [J] . Ryota Fujitsuka, Katsuyuki Sekine, Akiko Sekihara, Japanese journal of applied physics . 2012,第2Issue1期

机译：具有多级单元操作的高可靠性金属氧化物-氮化物-氧化物-半导体类型的NAND闪存的富硅氮化物电荷陷阱层工程
4. Modeling of Lateral Migration Mechanism of Holes in 3D NAND Flash Memory Charge Trap Layer during Retention Operation [C] . Jaeyeol Park, Hyungcheol Shin Silicon Nanoelectronics Workshop . 2019

机译：保持操作期间3D NAND闪存充电陷阱孔横向迁移机制的建模
5. NAND flash memory: Characterization, analysis, modelling, and mechanisms [D] . Cai, Yu 2012

机译：NAND闪存：表征，分析，建模和机制
6. Flash Memory Featuring Low-Voltage Operation by Crystalline ZrTiO4 Charge-Trapping Layer [O] . Yung-Shao Shen, Kuen-Yi Chen, Po-Chun Chen, -1

机译：通过晶体ZrTiO4电荷陷阱层实现低压操作的闪存
7. Charge Loss Induced by Defects of Transition Layer in Charge-Trap 3D NAND Flash Memory [O] . Fei Wang, Yuan Li, Xiaolei Ma, 2021

机译：电荷陷阱3D NAND闪存中过渡层缺陷引起的电荷损失

Modeling of Lateral Migration Mechanism of Holes in 3D NAND Flash Memory Charge Trap Layer during Retention Operation

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