首页> 外文会议>Silicon Nanoelectronics Workshop >Modeling of Lateral Migration Mechanism of Holes in 3D NAND Flash Memory Charge Trap Layer during Retention Operation

【24h】

Modeling of Lateral Migration Mechanism of Holes in 3D NAND Flash Memory Charge Trap Layer during Retention Operation

机译：保持操作期间3D NAND闪存充电陷阱孔横向迁移机制的建模

获取原文

页面导航

摘要
著录项
相似文献
相关主题

摘要

In this paper, we analyzed lateral migration mechanism of holes (LM) in 3D NAND Flash memory during retention operation. Retention characteristics were investigated using Technology Computer-Aided Design (TCAD) simulation and modeled using Weibull cumulative distribution function (WCD). Time-constant (τ) at various temperatures were extracted through the modeled equation. Finally, the activation energy (E_a) of LM was extracted by applying to the Arrhenius equation.

机译：本文在保留操作期间分析了3D NAND闪存中孔（LM）的横向迁移机制。使用技术计算机辅助设计（TCAD）模拟和使用Weibull累积分布函数（WCD）进行建模来研究保留特性。通过建模的方程提取各种温度的时间常数（τ）。最后，激活能量（e_{a 通过施加到Arrhenius方程来提取LM。}

著录项

来源
《Silicon Nanoelectronics Workshop》|2019年|1 v.|共2页
会议地点
作者
Jaeyeol Park; Hyungcheol Shin;
展开▼
作者单位

展开▼
会议组织
原文格式 PDF
正文语种
中图分类一般性问题;
关键词
DSL; Flash memories; Three-dimensional displays; Mathematical model; Temperature; Computational modeling; Solid modeling;

机译：DSL;闪存;三维显示器;数学模型;温度;计算建模;实体建模;

相似文献

外文文献
中文文献
专利

1. Lateral charge migration induced abnormal read disturb in 3D charge-trapping NAND flash memory [J] . Wang Fei, Cao Rui, Kong Yachen, Annales de l'I.H.P . 2020,第5期

机译：横向电荷迁移诱导3D电荷捕获NAND闪存中的异常读取干扰
2. Erratum: 'Lateral charge migration induced abnormal read disturb in 3D charge- trapping NAND flash memory' [Appl. Phys. Express 13, 054002 (2020)] [J] . Wang Fei, Cao Rui, Kong Yachen, Annales de l'I.H.P . 2020,第7期

机译：错误：'横向电荷迁移在3D充电捕获NAND闪存中引起异常读取干扰NAND闪存'[应用。物理。快递13,054002（2020）]
3. Engineering of Si-Rich Nitride Charge-Trapping Layer for Highly Reliable Metal-Oxide-Nitride-Oxide-Semiconductor Type NAND Flash Memory with Multi-Level Cell Operation [J] . Ryota Fujitsuka, Katsuyuki Sekine, Akiko Sekihara, Japanese journal of applied physics . 2012,第2Issue1期

机译：具有多级单元操作的高可靠性金属氧化物-氮化物-氧化物-半导体类型的NAND闪存的富硅氮化物电荷陷阱层工程
4. Modeling of Lateral Migration Mechanism of Holes in 3D NAND Flash Memory Charge Trap Layer during Retention Operation [C] . Jaeyeol Park, Hyungcheol Shin 2019 Silicon Nanoelectronics Workshop . 2019

机译：保留操作期间3D NAND闪存电荷陷阱层中空穴的横向迁移机制建模
5. NAND flash memory: Characterization, analysis, modelling, and mechanisms [D] . Cai, Yu 2012

机译：NAND闪存：表征，分析，建模和机制
6. Flash Memory Featuring Low-Voltage Operation by Crystalline ZrTiO4 Charge-Trapping Layer [O] . Yung-Shao Shen, Kuen-Yi Chen, Po-Chun Chen, -1

机译：通过晶体ZrTiO4电荷陷阱层实现低压操作的闪存
7. Charge Loss Induced by Defects of Transition Layer in Charge-Trap 3D NAND Flash Memory [O] . Fei Wang, Yuan Li, Xiaolei Ma, 2021

机译：电荷陷阱3D NAND闪存中过渡层缺陷引起的电荷损失

Modeling of Lateral Migration Mechanism of Holes in 3D NAND Flash Memory Charge Trap Layer during Retention Operation

摘要

著录项

相似文献

相关主题

期刊订阅