Department of Electrical Engineering, Nagaoka University of Technology 1603-1 Kamitomioka, Nagaoka-shi, Niigata 940-21 JAPAN;
Department of Electrical Engineering, Nagaoka University of Technology 1603-1 Kamitomioka, Nagaoka-shi, Niigata 940-21 JAPAN;
Department of Electrical Engineering, Nagaoka University of Technology 1603-1 Kamitomioka, Nagaoka-shi, Niigata 940-21 JAPAN;
Department of Electrical Engineering, Nagaoka University of Technology 1603-1 Kamitomioka, Nagaoka-shi, Niigata 940-21 JAPAN;
机译:利用微波等离子体CVD在Si上低温异质外延生长3C-SiC薄膜
机译:等离子体辅助CVD对Si(111)上3C-SiC薄膜低温生长的影响
机译:VHF-PECVD法沉积的衬底温度对微晶硅膜生长特性的影响
机译:通过狭窄的血浆CVD方法低温生长微晶SiC膜
机译:通过MOCVD沉积的低温III族氮化物薄膜的原位和生长后研究。
机译:GaAs上的低温等离子体增强了CVD的硅外延生长:III-V / Si集成的新范例
机译:通过热线CVD优化在极低温下沉积的掺杂微晶硅膜