Polarization mode basis functions for modeling insulator-coated through-silicon via (TSV) interconnections

摘要

For the design of high-density 3-D integration, this paper presents a method to model through-silicon via (TSV) interconnections. Focusing on the modeling of annular insulator coating around the TSV, this paper proposes a new type of modal basis functions that describe polarization current density distribution in insulator. The equivalent network including modal excess capacitance from the basis functions provides accurate electrical characteristics, compared with analytic and EM simulation results.