Performance Evaluation of 15nm Gate Length Double-Gate n-MOSFETs with HighMobility Channels: III-V, Ge and Si

摘要

We have thoroughly investigated Double Gate (DG) n-MOSFETs with III-V materialsrn(GaAs (111), InP (111), InAs (111) and InSb (111)) and compared to Si (100) and Gern(111). The simulations performed under ballistic transport take into account nonparabolicrnfull band structure, quantum confinement effects, BTBT leakage and SCErneffects. Our results show that with oxide thickness of 0.7 nm, despite of small density ofrnstates (DOS) of these materials, III-V and Ge outperform Si in terms of drive current andrngate delay. However, the high mobility, small bandgap materials like InAs, InSb and Ge,rnsuffer from excessive BTBT current and poor SCE, which limits their scalability. Effectrnof parasitic gate capacitance in DGFET on device performance is given as well.