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Performance Evaluation of 15nm Gate Length Double-Gate n-MOSFETs with High Mobility Channels: III-V, Ge and Si

机译：具有高移动通道的15nm栅极长度双栅极N-MOSFET的性能评估：III-V，GE和SI

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4. Performance Evaluation of 15nm Gate Length Double-Gate n-MOSFETs with HighMobility Channels: III-V, Ge and Si [C] . Donghyun Kim, Tejas Krishnamohan, Krishna C. Saraswat SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices . 2008

机译：具有高迁移率通道：III-V，Ge和Si的15nm栅极长度双栅极n-MOSFET的性能评估
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Performance Evaluation of 15nm Gate Length Double-Gate n-MOSFETs with High Mobility Channels: III-V, Ge and Si

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