Comprehensive Performance Benchmarking of III-V and Si nMOSFETs (Gate Length = 13 nm) Considering Supply Voltage and OFF-Current

摘要

Comprehensive performance benchmarking results for III-V and Si nanowire nMOSFETs (gate length of 13 nm) are reported based on the atomistic full-band ballistic quantum transport simulation including the effects of parasitic resistance and capacitance. After optimizing the source/drain doping for III-V nMOSFETs (to balance source exhaustion versus tunneling leakage), the current, capacitance, and switching delay (CV/I) metrics are compared across InAs, GaAs, and Si devices with different crystal orientations at various supply voltage (VDD) and OFF-current (IOFF) targets. III-V nMOSFETs are projected to improve over Si (e.g., up to ~50% reduction in gate-loaded CV/I) for low-power operation (low VDD, low IOFF) while they lose advantage in the high-performance (high VDD, high IOFF target) region. We also provide analytical models for the effects of carrier effective mass and physically explain how the performance comparison of III-V versus Si changes with device scaling.