Characterization of Copper CMP Process for Cu/low-K Submicron Interconnect Structures

摘要

The effects of damascene metal line width, pattern factor and dielectric support structures on Cu line (sheet) resistance for 0.13/0.10um technology copper CMP process have been investigated. Total metal loss, resistance variation and sheet resistance increase with increasing pattern factor and metal line width. These three physical and electrical properties indicate drastic increase, as the pattern factor is larger than 80% for different metal line widths. However, the additional of dielectric support structures within metal lines can effectively eliminate the influences of pattern factor and metal line width on total metal loss, sheet resistance and resistance variation.