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Low-k Cu Barriers in Damascene Interconnect Structures
Low-k Cu Barriers in Damascene Interconnect Structures
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机译:镶嵌互连结构中的低k铜势垒
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摘要
In the formation of an interconnect structure, a metal feature is formed in a dielectric layer. An etch stop layer (ESL) is formed over the metal feature and the dielectric layer using a precursor and a carbon-source gas including carbon as precursors. The carbon-source gas is free from carbon dioxide (CO2). The precursor is selected from the group consisting essentially of 1-methylsilane (1MS), 2-methylsilane (2MS), 3-methylsilane (3MS), 4-methylsilane (4MS), and combinations thereof.
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