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New Developments in CMP Pad Conditioner Technology

机译:CMP护垫修护技术的新发展

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摘要

This paper focuses on the challenges and new developments in chemical mechanical planarization (CMP) pad conditioner technology for the next-generation applications, with a special emphasis on the comparative performance characterization of pad conditioners. Empirical data from a number of case studies are presented. Different design 4" disk pad conditioners were evaluated using a benchtop polisher, a benchtop tribometer, and a 300 mm wafer polisher/tribometer to determine pad cut-rate, pad surface roughness, coefficient of friction (COF), and Cu polishing behavior. Results are presented for the effect of pad conditioner design parameters, including abrasive/feature size and distribution, on the pad cut-rate and pad surface roughness. Such information may be helpful in reducing the fab selection and optimization time for pad conditioners in advanced technology node applications. Present study demonstrates the usefulness of pad conditioner laboratory scale characterization.
机译:本文重点介绍了面向下一代应用的化学机械平面化(CMP)垫调节剂技术所面临的挑战和新发展,尤其着重于垫调节剂的比较性能表征。本文提供了许多案例研究的经验数据。使用台式抛光机,台式摩擦计和300 mm晶圆抛光机/摩擦计评估了不同设计的4“盘式抛光垫修整器,以确定抛光垫的切割速率,抛光垫表面粗糙度,摩擦系数(COF)和Cu抛光性能。给出了针对焊盘修整器设计参数(包括磨料/特征尺寸和分布)对焊盘切割速率和焊盘表面粗糙度的影响的信息,这些信息可能有助于减少先进技术节点中晶圆选择器的晶圆厂选择和优化时间应用:本研究表明垫调节剂实验室规模表征的有用性。

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