AIN-A1N Wafer Bonding and Its Thermal Characteristics

摘要

Homogeneous bonding was successfully demonstrated on 150 mm Si wafers by face-to-face fusion bonding of two clean and smooth aluminum nitride (A1N) layers. Characterization result from XPS confirms the layer composition and reveals that approximately 5 nm of the layer surface was partially oxidized during processing. The as-bonded wafer pair is nearly void and particle free with a high bonding strength of 1263.0 mJ/m~2, enabling it to withstand the subsequent process steps. In addition, the A1N-A1N bonded wafers appear to have the best heat dissipation capability when compared with other bonded wafers, which used SiO_2 or Al_2O_3 as the bonding layer.