An insight into the high temperature performance of SiC bipolar junction transistor

摘要

In last few years, a lot of effort has been made to improve the material properties of SiC and its power devices. In devices, SiC BJT is very important as it is capable in providing higher current with relatively low on-state[1] resistance. Despite all efforts, there are some fundamental issues, which still need to be resolved, e.g., surface recombination on the SiC surface, which is a critical limiting factor of the current gain at elevated temperatures or non-passivated surfaces. Hence an insight into the performance of the device is very important in order to understand the operation and optimize the device parameters.