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Method of manufacturing a SiC bipolar junction transistor and SiC bipolar junction transistor thereof
Method of manufacturing a SiC bipolar junction transistor and SiC bipolar junction transistor thereof
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机译:SiC双极结型晶体管的制造方法及其SiC双极结型晶体管
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摘要
A method of manufacturing a silicon carbide (SiC) bipolar junction transistor (BJT) and a SiC BJT are provided. The SiC BJT comprises an emitter region, a base region and a collector region. The collector region is arranged on a substrate having an off-axis orientation of about 4 degrees or lower. Further, a defect termination layer (DTL) is arranged between the substrate and the collector region. A thickness and a doping level of the DTL are configured to terminate basal plane dislocations in the DTL and reduce the growth of defects from the DTL to the collector region. At least some of the embodiments are advantageous in that SiC BJTs with improved stability are provided. Further, a method of evaluating the degradation performance of a SiC BJT is provided.
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机译:提供了一种制造碳化硅(SiC)双极结晶体管(BJT)和SiC BJT的方法。 SiC BJT包括发射极区,基极区和集电极区。集电极区域布置在具有约4度或更小的偏轴取向的基板上。此外,缺陷终止层(DTL)布置在衬底和集电极区域之间。 DTL的厚度和掺杂水平被配置为终止DTL中的基面位错并减少从DTL到集电极区域的缺陷的生长。实施例中的至少一些实施例的优点在于提供了具有改善的稳定性的SiC BJT。此外,提供了一种评估SiC BJT的降解性能的方法。
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