High temperature characteristics of ZnO-based MOS-FETs with photochemical vapor deposition SiO2 gate oxide

摘要

ZnO-based MOSFETs were fabricated in this study. The I-V curve of the source-drain ohmic contacts shows in figure 1. We can get the good ohmic performance by using the Ti/Al/Ti/Au metals and annealing at 525 °C, 3 minutes. Then, we deposited the SiO2 layer by using photo-CVD system and the schematic diagram of photo-CVD system shows in figure 2.