Highly ordered copper oxide (Cu<ce:inf loc='post'>2</ce:inf>O) nanopillar arrays using template assisted electrodeposition technique and their temperature dependent electrical characteristics
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Highly ordered copper oxide (Cu2O) nanopillar arrays using template assisted electrodeposition technique and their temperature dependent electrical characteristics

机译:高度有序的铜氧化物(Cu 2 O)纳米玻璃阵列使用模板辅助电沉积技术及其温度依赖性电特性

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Abstract Highly ordered Copper Oxide (Cu2O) nanopillars were successfully grown inside the porous anodized alumina (AAO) template by electrodeposition technique. To liberate the AAO template to get the free standing nanopillars, several etching trials were conducted using sodium hydroxide (NaOH) solution of varying concentration (ranging from 1?M to 5?M) and reaction time (8–60?min). On investigating the etched samples using scanning electron microscope, it was found that the sample treated with 1?M NaOH for 60?min yielded AAO template free standing vertically aligned nanopillars. Resistances of these nanopillars were found to be three orders of magnitude greater than the thin film which was used as a control sample. The temperature dependent (180–300?K) current-voltage (I-V) measurement on nanopillars showed non-linear characteristics which was analyzed using back to back schottky diode model and thermionic field emission (TFE) theory. Our calculations revealed that the carrier transport is diffusive (mean free path?=?8.9?nm?? length of nanopillars?=?4?μm) in nature and the existence of defect sites with activation energies of 0.3 and 0.6?eV which acts as hole traps. This present work demonstrates a reliable technique for realizing vertically aligned Cu2O nanopillars which could find application in solar cell, gas sensors, Li ion batteries, and memory devices. Highlights ? synthesis of vertically aligned Cu2O nanopillars inside the anodized alumina (AAO) template using low cost electrodeposition technique. ? Optimization of AAO template removal procedure to obtain the vertically aligned Cu2O nanopillars for optoelectronics and sensing applications. ? Probed the electrical defect states by carrying out low temperature (300–180?K) electrical transport measurement. ]]>
机译:<![CDATA [ 抽象 高度有序的铜氧化铜(CU 2 o通过电沉积技术成功地在多孔阳极氧化氧化铝(AaO)模板内成功生长纳米玻璃。为了释放AAO模板以获得自由常规纳米玻璃,使用不同浓度的氢氧化钠(NaOH)溶液(范围为1·m至5μm)和反应时间(8-60Ωme)进行几种蚀刻试验。使用扫描电子显微镜研究蚀刻样品,发现用1〜M NaOH处理的样品60?min,得到AaO模板自由排列的垂直对齐纳米粒子。发现这些纳米粒子的电阻比使用用作对照样品的薄膜大小为三个数量级。纳米钾上的温度依赖性(180-300·k)电流 - 电压(I-V)测量显示出使用返回肖特基二极管模型和热离子发射(TFE)理论进行分析的非线性特性。我们的计算表明,载流子传输是扩散的(意味着自由路径?=α.8.9?nm?&α≤x≤4≤μm),其存在于0.3和0.6的活化能量的缺陷部位?ev它作为孔陷阱。本工作证明了一种可靠的技术,用于实现垂直对齐的Cu 2 O纳米粒子,其可以在太阳能电池,气体传感器,LI离子电池和存储器件中找到应用。 亮点 垂直对齐的合成 2> 2 o anopillars在阳极氧化铝(aao)模板中使用低成本电沉积技术。 AAO的优化模板拆卸过程,以获得垂直对齐的Cu 2 O纳米粒子,用于光电子和传感应用。 通过执行低温(300-)探测电缺陷状态(300- 180?k)电气传输测量。 ]]>

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