首页> 外文会议>International Semiconductor Device Research Symposium;ISDRS '09 >Leakage current quenching and lifetime enhancement in 3D pillar structured silicon PIN diodes
【24h】

Leakage current quenching and lifetime enhancement in 3D pillar structured silicon PIN diodes

机译:3D柱状结构的硅PIN二极管的漏电流猝灭和寿命提高

获取原文

摘要

Structures containing three dimensional (3D) pillars, wires and tubes have applications in sensors, photodetectors as well as solar cells. We have been developing a thermal neutron detector by utilizing a 3D pillar architecture where the pillars are constructed out of a PIN diode material, and filling this structure with a neutron sensitive material,10B [1, 2]. By optimizing the pillar diameter, spacing and height, neutron detection efficiency > 50% is possible [3, 4]. Fig. 1 shows the schematic of a pillar structured detector. However, the large surface-to-volume ratio resulting from the 3D design can result in a high reverse leakage current, which results in a high noise floor for the device, causing a decrease in detector efficiency. Here we report passivation methods to reduce the leakage current by passivating the sidewall surface by wet chemical treatements and oxidation.
机译:包含三维(3D)支柱,电线和管子的结构可用于传感器,光电探测器以及太阳能电池。我们一直在开发热中子探测器,方法是利用3D柱结构,其中柱由PIN二极管材料制成,并用中子敏感材料 10 B [1、2]填充该结构。 。通过优化支柱的直径,间距和高度,中子探测效率> 50%是可能的[3,4]。图1示出了柱状结构的检测器的示意图。但是,由3D设计产生的较大的表面体积比可能导致较高的反向泄漏电流,从而导致设备的本底噪声较高,从而导致检测器效率降低。在这里,我们报告了通过湿化学处理和氧化来钝化侧壁表面以减少漏电流的钝化方法。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号