New Developments for Chemical Mechanical Polishing of Aluminum Alloy Thin Films

摘要

In dual damascene process, the need for separating plug and interconnect process steps is completely eliminated. This patterning scheme offers tremendous advantages, will begin to emerge in the deep sub-micron generation and utilizes Al CMP as a critical part of Al damascene process. In this study, Al-CMP characteristics are evaluated on Al alloy thin films of different compositions including: pure Al, Al-1.0percentSi-0.5percentCu, Al-1percentCu, Al-0.5percentCu and Al-1percentSi. Characteristics of the films such as alloy contents and grain size, and their effects on the CMP removal rates are assessed.