Applying selective liquid-phase deposition instead of reactive ionetching to the contact hole formation of MOSFETs

摘要

Owing to the demand of anisotropic etching, RIE is generally usednto etch SiO₂ to form contact holes. However, because RIEneasily causes damage, many inevitable drawbacks induced by plasma mustnbe carefully eliminated. In our previous research we have developed annetchingless method by using selective liquid-phase deposition (S-LPD),nwhich has an novel ability of selectively depositing oxide againstnphotoresist, and successfully fabricated submicron contact holes. Thencontact holes fabricated by S-LPD have shown many excellentncharacteristics. In this paper, we mainly apply this method to MOSFETs,nand show its superiority to replace RIE by comparing the I-Vncharacteristics of prepared devices