New concept of high-κ integration in MOSFET's by a deposition through contact holes

摘要

We report on a new concept for realization of transistors with high-κ oxide by deposition through the contact holes. This new integration allows low thermal budget for the high-κ film (deposited after source and drain anneal), no particular contamination issues (back-end steps) and easy dual gate and/or dual gate oxide realization for CMOS application.