A bulk-Si-compatible ultrathin-body SOI technology for sub-100 nmMOSFETs

摘要

A novel method of forming 80 nm gate length ultrathin-body SOInMOSFETs has been presented. Lateral solid-phase epitaxy of a depositednamorphous Si film was used to provide excellent controllability over 20nnm body thickness, resulting in good uniformity of devicencharacteristics. The ultrathin body provides good short channel effectnsuppression. Further optimization should enable fabrication ofnhigh-performance devices using a technology compatible with on-chip bulkndevices