SOI substrate compatible with the RFSOI and FDSOI technologies

摘要

A semiconductor on insulator type substrate, comprising at least:a support layer;a semiconductor surface layer;a buried dielectric layer located between the support layer and the semiconductor surface layer;a trap rich layer located between the buried dielectric layer and the support layer, and comprising at least one polycrystalline semiconductor material and/or a phase change material;;in which the trap rich layer comprises at least one first region and at least one second region adjacent to each other in the plane of the trap rich layer, the material of the at least one first region being in an at least partially recrystallized state and having an electrical resistivity less than that of the material in the at least one second region.