Analytical Compact Model for Lightly Doped Nanoscale Ultrathin-Body and Box SOI MOSFETs With Back-Gate Control

摘要

An analytical drain-current compact model for lightly doped short-channel ultrathin-body and box fully depleted silicon-on-insulator MOSFETs with back-gate control is presented. The model includes the effects of drain-induced barrier lowering, channel-length modulation, saturation velocity, mobility degradation, quantum confinement, velocity overshoot, and self-heating. The proposed model has been validated by comparing with the experimental transfer and output characteristics of devices with the channel lengths of 30 and 240 nm and with back bias varying from −3 to +3 V. The good accuracy of the model makes it suitable for implementation in circuit simulation tools.