A bulk-Si-compatible ultrathin-body SOI technology for sub-100 nm MOSFETs

摘要

A novel method of forming 80 nm gate length ultrathin-body SOI MOSFETs has been presented. Lateral solid-phase epitaxy of a deposited amorphous Si film was used to provide excellent controllability over 20 nm body thickness, resulting in good uniformity of device characteristics. The ultrathin body provides good short channel effect suppression. Further optimization should enable fabrication of high-performance devices using a technology compatible with on-chip bulk devices.