INFLUENCE OF Si(111)-(3~(1/2)x3~(1/2))/30°-Cr SURFACE PHASE ON GROWTH AND CONDUCTIVITY OF DISORDERED IRON 2D LAYERS ON Si(111)

摘要

Conductivity through disordered iron layers during its formation on Si(111)-7x7 and Si(111)-[(3~(1/2)x3~(1/2))/30°-Cr surface phase was investigated. Silicide formation on Si(111)7x7 surface is observed, but Si(111)-(3~(1/2)x3~(1/2))/30°-Cr surface phase behaves like a diffusion barrier for iron atoms. Nucleation and growth of iron islands p roceeds with increasing of metal thickness without formation of iron silicide. Iron forms continuous two dimensional metal layer with near bulk parameters starting from the thickness of 1 nm.