Laboratory of Semiconductor Materials, School of ICT, KTH-Royal Institute of Technology, Electrum 229, 164 40 Kista, Sweden;
Laboratory of Semiconductor Materials, School of ICT, KTH-Royal Institute of Technology, Electrum 229, 164 40 Kista, Sweden;
Laboratory of Semiconductor Materials, School of ICT, KTH-Royal Institute of Technology, Electrum 229, 164 40 Kista, Sweden,Epiclarus AB, Isafjordsgatan 39B, 164 40 Kista, Sweden;
Laboratory of Semiconductor Materials, School of ICT, KTH-Royal Institute of Technology, Electrum 229, 164 40 Kista, Sweden;
Alcatel-Thales Ⅲ-Ⅴ Lab, THALES Research Technology France, Campus Polytechnique, 1 avenue Augustin Fresnel, 91767 Palaiseau cedex, France;
Alcatel-Thales Ⅲ-Ⅴ Lab, THALES Research Technology France, Campus Polytechnique, 1 avenue Augustin Fresnel, 91767 Palaiseau cedex, France;
Alcatel-Thales Ⅲ-Ⅴ Lab, THALES Research Technology France, Campus Polytechnique, 1 avenue Augustin Fresnel, 91767 Palaiseau cedex, France;
Institute for Quantum Electronics, ETH Zuerich, 8093 Zuerich, Switzerland;
Institute for Quantum Electronics, ETH Zuerich, 8093 Zuerich, Switzerland;
Institute for Quantum Electronics, ETH Zuerich, 8093 Zuerich, Switzerland;
Institute for Quantum Electronics, ETH Zuerich, 8093 Zuerich, Switzerland;
Buried heterostructure quantum cascade lasers; Micro-stripe QCL; Photonic crystal QCL;
机译:通过金属有机气相外延(MOVPE)生长的1.55μm梯度折射率分离禁闭掩埋异质结构(GRINSCH)多量子阱(MQW)激光器的初步可靠性研究
机译:可靠的1.5μm掩埋异质结构,单独限制,多量子阱(BH-SC-MQW)激光器,完全通过金属有机气相外延(MOVPE)生长
机译:量子级联激光器中低压金属有机气相外延生长的InGaAs / AlInAs超晶格的技术和性能
机译:用于传感应用的氢化物气相外延辅助埋藏的异质结构量子级联激光器
机译:阶梯形有源区中红外量子级联激光器和埋入异质结构的新型制造工艺
机译:通过氢化物气相外延从硅衬底提取的独立式GaN晶体中电子陷阱能级的初步观察
机译:分子束外延生长的亚毫安级阈值电流伪态InGaAs / AlGaAs埋藏异质结构量子阱激光器
机译:步进锥形有源区中红外量子级联激光器和埋置异质结构的新型制造工艺。