DEVICE APPLICATIONS USING BONDED SOI WAFERS

摘要

In the semiconductor device, the thick film SOI structure can separate various devices by dielectric isolation and can improve the noise immunity and thermo-tolerance demanded as automotive electronics remarkably. Moreover, it is suitable for integration of the high voltage devices in a high density. In addition, this structure can simplify the wafer processing in the MEMS field and can especially realize a unique sensor (1). On the other hand, the silicon wafer direct bonding technique enables a new structure such as the buried electrode etc. to be formed in the substrate, and can give the semiconductor device a new, additional function. In this paper, some semiconductor devices that we developed by using the feature of SOI structure mentioned above will be described.