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PULSED METALORGANIC CHEMICAL VAPOR DEPOSITION OF IRON OXIDES AND BISMUTH - IRON OXIDES

机译:氧化铁和铋的脉冲金属有机化学气相沉积。

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Deposition of thin films of iron oxides and bismuth/iron oxides on SrTiO_3 and MgO substrates was carried out in a low-pressure pulsed-metalorganic chemical vapour deposition system. For iron oxide films, we studied the effect of the oxygen partial pressure in the reactor. On SrTiO_3 substrates, γ-Fe_2O_3 phase is grown for oxygen flow from 300 to 400 sccm. On MgO substrates, the Fe_3O_4 phase grows with no oxygen in the reactor. We also studied the effect of pulse frequency, and observed that distinctive phases are grown for distinctive frequencies. The magnetic properties of the films were studied. A saturation magnetization (Ms) of 200 emu.cm~(-3) and a coercitive field (Hc) of 400 Oe were obtained for γ-Fe_2O_3 films. A saturation magnetization of 100 emu.cm~(-3) and a coercitive field of 300 Oe were obtained for Fe_3O_4 films. We also examined the effect of bismuth addition and particularly, we underlined the parameters that control the growth of BiFeO_3 phase on SrTiO_3 substrates. BiFeO_3 films exhibit a saturation magnetization of 30 emu.cm~(-3).
机译:在低压脉冲金属有机化学气相沉积系统中,在SrTiO_3和MgO衬底上沉积氧化铁和铋/氧化铁薄膜。对于氧化铁膜,我们研究了反应器中氧分压的影响。在SrTiO_3衬底上,生长γ-Fe_2O_3相,使氧气流量从300到400 sccm。在MgO衬底上,Fe_3O_4相在反应器中没有氧气的情况下生长。我们还研究了脉冲频率的影响,并观察到独特的相位随独特的频率而增长。研究了膜的磁性。 γ-Fe_2O_3薄膜的饱和磁化强度(Ms)为200 e·cm〜(-3),矫顽场(Hc)为400 Oe。 Fe_3O_4薄膜的饱和磁化强度为100 emu.cm〜(-3),矫顽场为300 Oe。我们还研究了添加铋的影响,特别是我们强调了控制BiFeO_3相在SrTiO_3衬底上生长的参数。 BiFeO_3薄膜的饱和磁化强度为30 ecm.cm(-3)。

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