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Visible photoluminescence of CdTe anodically etched layers

机译:CdTe阳极蚀刻层的可见光致发光

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摘要

In this paper we describe the results of prelimanary studies of the short-wavelength photoluminescence in CdTe subjected to anodic etching for the purpose of production subsurface leyers with a structure similar to that of porous silicon. The anodic etching of the p-CdTe single crystals was carried out in a solution of HF with an admixture of HNO_3. We observe for the first time the broad photoluminescence band in visible spectral region (h omega >Eg), which may be ude to both size effects and to the formation of layers which have a chemical composition different from CdTe at the surface.
机译:在本文中,我们描述了对进行阳极蚀刻的CdTe中短波长光致发光的初步研究结果,目的是生产具有类似于多孔硅结构的表面下发光层。 p-CdTe单晶的阳极蚀刻是在具有HNO_3混合物的HF溶液中进行的。我们首次观察到可见光谱区域中的宽光致发光带(ω> Eg),这可能是由于尺寸效应和表面化学组成不同于CdTe的层的形成所致。

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