Growth and characterization o f coherent quantum dots formed by single-and multi-cycle InGaAs-GaAs metal-organic chemical vapor deposition

摘要

We demonstrate direct growth of electronically coupled zero-dimensional structures using metal-organic chemical vapor deposition. After the first sheet with INGaAs pyramids is formed on the GaAs (100) surface, alternate short-period GaAs-InGaAs deposition leads to the island shape transformation effect. As a result column-like INGaAs structures each laving a characteristic lateral size of approx 23 nm at the top and composed of many closely packed InGaAs parts separated by only 2-3 monolayer-thick barrier layers are formed. The full widht at half maximum of luminescence (resonant with the absoprtion peak) equals to 28 meV.