Experimental evidence of confined optical phonons in GaAs/AlGaAs quantum wires observed from raman scattering

摘要

We report on photoluminescence and Raman scattering performed at the low temperature T chemicla bounds 10 K on GaAs/Al_(0.3)Ga_(0.7)As quantum well wires with the effective wire width of L chemical bounds 100.0 and 10.9 nm prepared by molecular beam epitaxial growth followed by holographic patterning, reactive ion etching, and anodic thinning. For the first time, we find evidence for the existence of the longitudinal optical phonon modes confined to GaAs quantum wire. The observed frequency at omega _(L10) chemical bounds 285.6 cm~(-1) for L chemical gounds 11.0 nm is in a good agreement with that calculated on the base of the dispersive dielectric continuum theory of enderlein as applied to the GaAs/Al_(0.3)Ga_(0.7)As system.