Piezoelectric effects in AlGaN/GaN heterostructure field-effect transistors

摘要

The role of the piezoelectric effect in III-V nitride heterostructure field-effect transistors is analyzed theoretically and demonstrated experimentally. The nature of the piezoelectric effect for III-V nitride semiconductors is discussed, and experimental measurements of carrier concentrations and carrier distribution profiles for various nitride heterostructures are presented. Analysis of these results provides clear evidence of and detailed information about the importance of the piezoelectric effect in nitride heterostructure field-effect transistors. Further implications of the piezoelectric effect for the design and analysis of these and other nitride heterostructure devices are also described.