GaInp/GaInAs/GaAs-MODFETs WITH PSEUDOMORPHIC GalnP BARRIERS, DEVICE CONCEPT AND DEVICE PROPERTIES

摘要

GaInP/GaInAs/GaAs Modulation Doped Field Effect Transistors (MODFET's) with a pseu8domorphic channel and a pseudomorphic barrier have been fabricated from layer structures grown on GaAs substrates by metalorganic chemical vapour deposition (MOCVD). Transistors with a gatelength of 1 #mu#m show drain saturation currents of 570 mA/mm and extrinsic transconductances of 420 mS/mm. Furthermore, a high drain-source breakdown voltage of 16V is achieved from which an output power of 1 W/mm is estimated for class-B operation. Non-passivated devices do not show any degradation when subjected to high temperature operation to 150 deg C. Transistors with a gatelength of 0.15 #mu#m show drain saturation currents of 580 mA/mm and extrinsic transconductances of 660 mS/mm. The devices have excellent RF properties with extrinsic cutoff frequencies of 120 and 295 GHz for f_T and f_(max), respectively. These results demonstrate the great potential of GaInP/GaInAs/GaAs heterostructures for the fabrication of reliable high frequency and high power MODFETs on GaAs substrates.