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Biaxial-stress barrier shifts in pseudomorphic tunnel devices
Biaxial-stress barrier shifts in pseudomorphic tunnel devices
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机译:拟晶隧道器件中的双轴应力势垒位移
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摘要
Resonant tunneling devices having improved peak-to-valley current ratios are disclosed. The resonant tunneling device comprises a quantum well layer surrounded by first and second barrier layers, the first and second barrier layers being comprised of an indirect first III- V compound semiconductor. The first barrier layer being formed on a substrate of a second III-V compound semiconductor having a lattice constant larger than the lattice constant of the first barrier layer thereby inducing a biaxial stress in the first barrier layer. The biaxial stress results in an energy shift at resonance that increases the peak to valley current ratio of the device.
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