首页> 外国专利> METHOD FOR MANUFACTURING TUNNEL BARRIER LAYER OR GATE INSULATING FILM AND DEVICE FOR MANUFACTURING TUNNEL BARRIER LAYER OR GATE INSULATING FILM

METHOD FOR MANUFACTURING TUNNEL BARRIER LAYER OR GATE INSULATING FILM AND DEVICE FOR MANUFACTURING TUNNEL BARRIER LAYER OR GATE INSULATING FILM

机译:制造隧道阻挡层或栅极绝缘膜的方法以及制造隧道阻挡层或栅极绝缘膜的设备

摘要

PROBLEM TO BE SOLVED: To provide a method and a device for manufacturing a tunnel barrier layer or a gate insulating layer which has excellent film quality and uniformity in thickness.;SOLUTION: An area of a substrate 2 on which an erosion area of a target 126a is projected along a normal 145 of a surface of the target 126a is shielded by a shield 139A and further an area in which an angle formed between a normal of a surface 2a of the substrate 2 and an incidence direction of sputter particles generated from the center of the target 126a is 45° or more is shielded by the shield 139A, and in this state, sputter particles passing an aperture formed on the shield 139A are deposited on the linearly moved substrate.;COPYRIGHT: (C)2014,JPO&INPIT
机译:解决的问题:提供一种用于制造具有优异的膜质量和厚度均匀性的隧道势垒层或栅绝缘层的方法和装置;解决方案:衬底2的区域,在该区域上靶的腐蚀区域126a沿着靶126a的表面的法线145投影,并被护罩139A遮蔽,并且还形成了这样的区域,在该区域中,基板2的表面2a的法线与从该表面2a产生的溅射粒子的入射方向之间形成角度。靶材126a的中心为45°以上时,被遮蔽物139A遮蔽,在该状态下,通过形成在遮蔽物139A上的开口的溅射粒子沉积在直线移动的基板上。COPYRIGHT:(C)2014,JPO&INPIT

著录项

  • 公开/公告号JP2014116059A

    专利类型

  • 公开/公告日2014-06-26

    原文格式PDF

  • 申请/专利权人 IZA CORP;

    申请/专利号JP20130189742

  • 发明设计人 NOEL ABARRA;

    申请日2013-09-12

  • 分类号G11B5/39;C23C14/08;C23C14/34;C23C14/54;

  • 国家 JP

  • 入库时间 2022-08-21 16:20:00

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