Self-aligned Top-gate ZnO TFTs with Sputtered Al2O3 Gate Dielectric

摘要

High performance self-aligned top-gate ZnO thin film transistors utilizing high-k Al2O3 thin film as gate dielectric are developed in this paper. Good quality Al2O3 thin film was deposited by reactive DC magnetron sputtering technique using aluminum target in a mixed argon and oxygen ambient at room temperature. The resulting transistor exhibits a field effect mobility of 30 cm2/V s, a threshold voltage of -0.6 V, a subthreshold swing of 0.15 V/decade and an on/off current ratio of 107. The proposed top-gate ZnO TFTs in this paper can act as driving devices in the next generation flat panel displays.