Contact effects on the threshold voltage extraction in organic thin-film transistors

摘要

In this work, contact effects on the threshold voltage (VT) extraction in top-contact bottom-gate organic thin-film transistors (OTFTs) were investigated. The VT is extracted by the limear extrapolation of the ID0.5-versus-FG function to VGaxis in the saturation regime. As shown in Fig.2 the VT of Au OTFTs is much more dependent on the channel length than that of the Cu TFTs, which is caused by the different contact properties in the devices of the two different metals. The detaied physical mechanisms will be disscussed. And the results indicated that a proper VT extraction method excluding the contact effects is demanded for accurate characterization and modeling of OTFTs.