The impact of the S/D extensions on the drain current characteristics of deep submicron Si nMOSFETs at 77K

摘要

It is demonstrated that 77K operation of deep submicron nMOSFETs, fabricated in a room temperature technology, not necessarily leeds to performance improvement. The extension does is identified as a key element in understanding this phenomenon. An insufficient gate overlap #DELTA#L reduces hte gate field effect action on the channel resulting in a reduced current.