Improved Electrical Performance of InP-Based Single Heterojunction Bipolar Transistor in Terms of the Maximum Frequency of Oscillation

摘要

Communication and Information technologies have known a great evolution thanks to the use of Bipolar Heterojunction Transistors (HBTs). These electronic devices have excellent electrical characteristics. In this work, we have designed a topology of the InP/InGaAs Single Heterojunction Bipolar Transistor SHBT using the simulator TCAD-Silvaco (Technology Computer Aided Design). We have carried out the electronic device according to its meshing, doping distribution, materials...Some physical models were included in the simulation to consider the various mechanisms and phenomena happening inside the device structure. We then investigated the influence of two technological parameters which are the base width W_b and the base doping concentration N_b on the electrical performance of the SHBT in terms of the maximum frequency of oscillation f_(max). Finally, the obtained results based on our investigation allowed us to define an optimized device which is promising for high frequency applications. The maximum frequency of oscillation f_(max) for the improved device is approximately equal to 23.0 GHz.