首页> 外文会议>Power Quality and Supply Reliability Conference, 2008 >An Analytical Drain Current Model for AlGaN/GaN Metal Insulator Semiconductor Heterostructure Field Effect Transistor (MISHFET): A Comparative Study with Conventional HFETs for High Power Microwave Applications

【24h】

An Analytical Drain Current Model for AlGaN/GaN Metal Insulator Semiconductor Heterostructure Field Effect Transistor (MISHFET): A Comparative Study with Conventional HFETs for High Power Microwave Applications

机译：AlGaN / GaN金属绝缘体半导体异质结构场效应晶体管（MISHFET）的分析漏电流模型：与用于大功率微波应用的常规HFET的比较研究

获取原文

获取外文期刊封面目录资料

页面导航

摘要
著录项
引文网络
相似文献
相关主题

摘要

An analytical drain current model of a novel device architecture- AlGaN/GaN Metal Insulator Semiconductor Heterostructure Field Effect Transistor (MISHFET) has been presented to assess the microwave performance of the device for sub micron gate lengths. T

机译：提出了一种新型器件架构的分析漏极电流模型-AlGaN / GaN金属绝缘体半导体异质结构场效应晶体管（MISHFET），以评估亚微米级栅极长度的器件的微波性能。 Ť

著录项

来源
《Power Quality and Supply Reliability Conference, 2008》|2007年|P.1-4|共4页
会议地点 Bangkok,Thailand
作者
Aggarwal; R.; Gupta; M.; Gupta; R.S.; Agrawal; A.;
展开▼
作者单位

展开▼
会议组织
原文格式 PDF
正文语种
中图分类
关键词
MISFET; high electron mobility transistors; AlGaN-GaN; HFET; drain current model; drain saturation current; metal insulator semiconductor heterostructure field effect transistor; microwave application; AlGaN/GaN; Drain current; Gate voltage swing; MISHFET; Polarizat;

机译：MISFET;高电子迁移率晶体管； AlGaN-GaN; HFET;漏极电流模型；漏极饱和电流；金属绝缘体半导体异质结构场效应晶体管；微波应用； AlGaN / GaN；漏极电流栅极电压摆幅； MISHFET;极化;

相似文献

外文文献
中文文献
专利

1. ANALYTICAL PERFORMANCE EVALUATION OF AlGaN/GaN METAL INSULATOR SEMICONDUCTOR HETEROSTRUCTURE FIELD EFFECT TRANSISTOR AND ITS COMPARISON WITH CONVENTIONAL HFETs FOR HIGH POWER MICROWAVE APPLICATIONS [J] . Ruchika Aggarwal, Anju Agrawal, Mridula Gupta, Microwave and optical technology letters . 2008,第2期

机译：大功率微波应用中AlGaN / GaN金属绝缘体半导电异质结场效应晶体管的分析性能评估及其与常规HFET的比较
2. Poole Frenkel current and Schottky emission in SiN gate dielectric in AlGaN/GaN metal insulator semiconductor heterostructure field effect transistors [J] . Hanna Mina J., Zhao Han, Lee Jack C. Applied Physics Letters . 2012,第15期

机译：AlGaN / GaN金属绝缘体半导体异质结构场效应晶体管中SiN栅极电介质中的Poole Frenkel电流和肖特基发射
3. Enhancement-Mode AlGaN/GaN Vertical Trench Metal–Insulator–Semiconductor High-Electron-Mobility Transistors with a High Drain Current Fabricated Using the AlGaN Regrowth Technique [J] . Akio Yamamoto, Keito Kanatani, Norifumi Yoneda, Physica status solidi . 2020,第7期

机译：使用AlGaN再生技术制造的具有高漏极电流的增强型AlGaN / GaN垂直沟槽金属-绝缘体-半导体高电子迁移率晶体管
4. An Analytical Drain Current Model for AlGaN/GaN Metal Insulator Semiconductor Heterostructure Field Effect Transistor (MISHFET): A Comparative Study with Conventional HFETs for High Power Microwave Applications [C] . Aggarwal R., Gupta M., Gupta R.S., Asia Pacific Microwave Conference . 2007

机译：AlGaN / GaN金属绝缘体半导体异质结构场效应晶体管的分析漏极电流模型（MISHFET）：具有高功率微波应用的传统HFET的比较研究
5. Analytical Modeling of Drain-Current Characteristics of AlGaN/GaN HFETs with Incorporation of the Impacts of Virtual-Gate and Transferred-Electron Effect. [D] . Moradi, Maziar. 2010

机译：结合虚拟栅极和转移电子效应的影响，对AlGaN / GaN HFET的漏极电流特性进行分析建模。
6. Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors [O] . Dongmin Keum, Hyungtak Kim 2019

机译：质子辐照对常断型AlGaN / GaN栅嵌入式金属-绝缘体-半导体异质结构场效应晶体管随时间变化的介电击穿特性的影响
7. Investigation of 'high-k' materials as alternative dielectrics for AlGaN/GaN-based metal-insulator-semiconductor heterostructure field effect transistors (MISHFET) [O] . Heidelberger Gero 2009

机译：研究“高k”材料作为AlGaN / GaN基金属-绝缘体-半导体异质结构场效应晶体管（MISHFET）的替代电介质

An Analytical Drain Current Model for AlGaN/GaN Metal Insulator Semiconductor Heterostructure Field Effect Transistor (MISHFET): A Comparative Study with Conventional HFETs for High Power Microwave Applications

摘要

著录项

引文网络

相似文献

相关主题

期刊订阅