An Analytical Drain Current Model for AlGaN/GaN Metal Insulator Semiconductor Heterostructure Field Effect Transistor (MISHFET): A Comparative Study with Conventional HFETs for High Power Microwave Applications

摘要

An analytical drain current model of a novel device architecture-^sAlGaN/GaN Metal Insulator Semiconductor Heterostructure Field Effect Transistor (MISHFET) has been presented to assess the microwave performance of the device for sub micron gate lengths. T