A Study of Defect generation on SOI Wafer

摘要

Recently, bonded SOI wafer has become the useful material for hih Voltage ICs over 500(V). There was a serious problem of defect that origiated bonded SOI wafer. The cause of the defect on SOI wafer was investigated theoretically and experimentally. It was found that high temperature nad long time anneal 1200 degree, 8 hours, is effectiveto decrease the defect.