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Pt filling within mesoporous silicon by electrodeposition

机译:通过电沉积将Pt填充到中孔硅中

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The filling of platinum within mesoporous silicon prepared in highly doped p-type silicon was investigated. The deposition of platinum within the mesopores was achieved when using a solution with Pt (II), while the pores were kept empty in a solution with Pt (IV). The particles of platinum were obtained by displacement deposition. The particles were distributed uniformly within the mesopores. The electrodeposition under a weak cathodic polarization resulted in the formation of platinum rods due to the continuous filling from the bottom. The displacement deposition was successfully suppressed by modifying the pore wall by an organic group. The amount of platinum deposition obtained under the cathodic polarization was significantly decreased when using the wall-modified mesoporous silicon. These results suggest that the electrodeposition and displacement deposition occur simultaneously within as-prepared mesoporous silicon.
机译:研究了在高掺杂p型硅中制备的介孔硅中铂的填充情况。当使用含Pt(II)的溶液时,铂在中孔中的沉积得以实现,而含Pt(IV)的溶液中的孔却保持为空。通过置换沉积获得铂颗粒。颗粒均匀地分布在中孔内。由于从底部连续填充,在弱阴极极化下进行电沉积会形成铂棒。通过用有机基团修饰孔壁成功地抑制了位移沉积。当使用壁改性的中孔硅时,在阴极极化下获得的铂沉积量显着减少。这些结果表明,电沉积和置换沉积同时发生在准备好的介孔硅中。

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