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P-H bonds in the reconstruction of P-rich InP(100) measured with FTIR

机译:FTIR测量的富P InP(100)重建中的P-H键

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The reconstruction of P-rich InP(100) requires at least a (2x4) surface unit cell to stay semiconducting and uncharged (electron counting rule). Recently it has been shown that the much smaller (2x2) unit cell obtained from MOCVD (metalorganic vapor deposition) growth contains P-H bonds. Orientation and polarization dependent Fourier Transform Infrared Spectroscopy (FTIR) of the P-H bonds in the Attenuated Total Reflection (ATR) mode have confirmed the specific form of the (2x2) surface unit cell (T. Letzig et al., Phys. Rev. B 71 (2005) 033308) earlier proposed by W.G. Schmidt and coworkers (W.G. Schmidt et al., Phys. Rev. Lett. 90 (2003) 126101). Surface unit cells with a higher concentration of P-H bonds also obey the electron counting rule. A c(2x2) LEED image and two matching FTIR peaks were observed when the (2x2) reconstructed surface was exposed to atomic hydrogen. The corresponding c(2x2)-2P-3H surface unit cell can be shown to form a stable surface phase (T. Letzig et al., Phys. Rev. B, submitted). The complete transformation of the (2x2) surface to this new phase is not observed since the surface deteriorates when exposed to a higher dose of atomic hydrogen.
机译:富含P的InP(100)的重建至少需要一个(2x4)表面晶胞才能保持半导体和不带电(电子计数规则)。近来已经显示,从MOCVD(金属有机气相沉积)生长获得的小得多的(2×2)晶胞含有P-H键。 PH键在弱化全反射(ATR)模式下的取向和偏振相关的傅立叶变换红外光谱(FTIR)已证实(2x2)表面晶胞的特定形式(T. Letzig等人,Phys。Rev. B WG Schmidt和同事(WG Schmidt等人,Phys。Rev. Lett。90(2003)126101)早些时候提出的建议(例如,J.Biol.Chem.71(2005)033308)。具有较高P-H键浓度的表面晶胞也遵守电子计数规则。当(2x2)重建的表面暴露于原子氢时,观察到c(2x2)LEED图像和两个匹配的FTIR峰。可以显示相应的c(2x2)-2P-3H表面晶胞形成了稳定的表面相(T. Letzig等人,Phys。Rev. B,已提交)。没有观察到(2x2)表面完全转变为新相,因为当暴露于更高剂量的原子氢时表面会变质。

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