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P-H bonds in the surface unit cell of P-rich ordered InP(001) grown by metalorganic chemical vapor deposition

机译:金属有机化学气相沉积法生长的富P有序InP(001)表面晶胞中的P-H键

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The Fourier transform infrared spectrum of the MOCVD-grown (metalorganic chemical vapor deposition) P-rich ordered InP(001) surface was measured in ultrahigh vacuum applying attenuated total reflection. The surface was measured without carrying out any post-transfer surface preparation. The low-energy electron defraction pattern showed the well-known (2 X 1) structure with streaks in the [-110] direction. After exposure to activated deuterium, the different infrared spectrum revealed a pronounced peak at 2308 cm~(-1), which was ascribed to P-H bonds. Polarization-dependent spectra showed the dipole moments of the P-H bonds oriented only in [001] and [-110] directions. A weak 0.8 cm~(-1) splitting was measured between the symmetric and antisymmetric modes of two neighboring P-H bonds. These observations provide direct proof for two oriented P-H bonds as in the surface unit cell proposed by Hahn and Schmidt [Surf. Rev. Lett. 10, 163 (2003)]. Additional much smaller peaks with different polarization behavior varied greatly for different samples and were ascribed to defects or impurities.
机译:在超高真空下应用衰减的全反射,测量了MOCVD增长(金属有机化学气相沉积)富P有序InP(001)表面的傅立叶变换红外光谱。在不进行任何转印后表面准备的情况下测量表面。低能电子衍射图案显示出众所周知的(2 X 1)结构,在[-110]方向上有条纹。暴露于活化的氘后,不同的红外光谱在2308 cm〜(-1)处出现明显的峰,归因于P-H键。偏振相关光谱表明,P-H键的偶极矩仅沿[001]和[-110]方向取向。在两个相邻的P-H键的对称和反对称模式之间测得了0.8 cm〜(-1)的弱分裂。这些观察结果为Hahn和Schmidt提出的表面晶胞中两个取向的P-H键提供了直接的证据[Surf。牧师10,163(2003)]。对于不同的样品,具有不同极化行为的其他小得多的峰相差很大,并且归因于缺陷或杂质。

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