Influence of irradiation by neutrons on the properties of p~+-n-n~+ Si radiation detectors

摘要

In the framework of WODEAN project of CERN-RD50 collaboration the photoconductivity spectra of p~+-n-n~+ Si detectors were investigated depending on irradiation by high energy neutrons. The samples were irradiated by neutrons to the fluencies 1 ×10~(13)-1 ×10~(16)cm~2. The extrinsic photoconductivity spectra indicated that upon irradiation deep levels (DL) below the middle of the band gap were created. Their activation energies were in the ranges 0.49-0.52, 0.77-0.81, 0.88-0.91, and 1.02-1.11 Ev. The effective concentrations of these levels were depending on the fluencies and on the isochronal thermal treatments at low temperatures. The changes of DL population induced by annealing have been compared with the steady state lifetimes and photoconductivity decay constants.