Trivacancy-oxygen complex in silicon: Local vibrational mode characterization

摘要

FTIR study of the evolution of multivacancy-oxygen-related defects in the temperature range 100-350 ℃ in Czochralski-grown Si samples irradiated with different particles (10 MeV electrons and 5 MeV neutrons) has been carried out. Appearance of two absorption bands positioned at 833.4 and 842.4 cm~(-1) has been found upon annealing of the divacancy related absorption band at 2767 cm~(-1). The 833.4 cm~(-1) band is assigned to a divacancy-oxygen defect. The 842.4 cm~(-1) band is much more pronounced in neutron irradiated samples and we argue that it is related to a trivacancy-oxygen defect formed via interaction of mobile V_3 with O_1 atoms.