Electrodeposition of In-S based buffer layers for high efficiency Cu(In,Ga)Se_2 based solar cells

摘要

Soft chemical processes such as screen printing, sol-gel, electrochemical or chemical bath-deposition, enable low cost and easily scalable processes for thin layer solar cells. For the CIGSe based solar cells, with the standard Mo/Cu(In,Ga)Se_2/CdS/i-ZnO~+-ZnO structure, all layers of the p-n heteroj unction and the transparent conductive oxide window can be grown by aqueous solution processes. In this work we focus on the electrochemical investigation of In-S layers. XPS analyses show the presence of both S and O. Conversion efficiencies of complete devices up to 14 % are obtained.