Ferroelectric memory element based on thin film field effect transistor

摘要

We report the preparation and investigation of ferroelectric field effect transistors (FET) using ZnO:Li films with high field mobility of the charge carriers as a FET channel and as a ferroelectric active element simultaneously. The possibility for using of ferroelectric FET based on the ZnO:Li films in the ZnO:Li/LaB_6 heterostructure as a bi-stable memory element for information recording is shown. The proposed ferroelectric memory structure does not manifest a fatigue after multiple readout of once recorded information.