Deflector contamination in E-beam mask writer and its effect on pattern placement error of photomask for sub 20nm device node

摘要

One of the concerned phenomena that influencing to the performance of electron beam mask writer is contamination ofdeflector. Previous studies show that the relation between the deflector contamination and pattern placement error. In fact,the source of the contamination of deflector was not defined clearly yet. However, the fact that of deflector contaminationclearly influences the pattern placement error on mask fabrication. We think that there is no detailed investigation about theeffect of deflector contamination on the pattern placement error of production photomask. This paper will describe the effectof e-beam positioning error due to the contamination of deflector in electron optic system. To reduce the placement error bythe deflector contamination circumstance the e-beam drift was evaluated in various conditions of deflection based on thetheoretical assumption and our own modeling, and optimization of the deflection condition. Furthermore, we will presentthe requirements on position accuracy of deflector for the photomask of sub 20nm device node.© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.