首页> 外文会议>Photomask and Next-Generation Lithography Mask Technology XIV pt.2; Proceedings of SPIE-The International Society for Optical Engineering; vol.6607 pt.2 >Impact of Transmitted Reflected Light Inspection on Mask Inspectability, Defect Sensitivity, and Mask Design Rule Restrictions
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Impact of Transmitted Reflected Light Inspection on Mask Inspectability, Defect Sensitivity, and Mask Design Rule Restrictions

机译:透射光和反射光检查对面罩可检查性,缺陷敏感性和面罩设计规则限制的影响

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摘要

The application of aggressive optical proximity correction (OPC) has permitted the extension of advanced lithographic technologies. OPC is also the source of challenges for the mask-maker. Sub-resolution features, small shapes between features and highly-fragmented edges in the design data are difficult to reproduce on masks and even more difficult to inspect. Since the inspection step examines every image on the mask, it is required to guarantee the total plate quality. The patterns themselves must be differentiated from defects, and the ability to recognize small deviations must be maintained. In other words, high inspectability at high defect sensitivities must be achieved simultaneously. This must be done without restricting necessary OPC designs features. Historically, transmitted light has been deployed for mask pattern inspection. Recently, the inspection challenge has been both enhanced and complicated by the introduction of reflected light pattern inspection. Reflected light reverses the image contrast of features, creating a new set of design limits. This paper introduces these new reflected inspection limits. Multiple platform capabilities will be incorporated into the study of reflected and transmitted inspection capability. The benefits and challenges of integrating a combination of transmitted and reflected light pattern inspection into manufacturing will be explored. Aerial Image Measurement System (AIMS) analysis will be used to help understand how to leverage the enhanced inspection capability while avoiding unnecessary restrictions on OPC.
机译:积极的光学邻近校正(OPC)的应用允许扩展高级光刻技术。 OPC也是口罩制造商面临挑战的根源。设计数据中的亚分辨率特征,特征之间的小形状以及高度碎片化的边缘很难在蒙版上重现,甚至更难检查。由于检查步骤检查掩模上的每个图像,因此需要保证整个印版质量。图案本身必须与缺陷区分开,并且必须保持识别小偏差的能力。换句话说,必须同时实现在高缺陷敏感性下的高可检查性。必须在不限制必要的OPC设计功能的情况下完成此操作。历史上,透射光已经被部署用于掩模图案检查。近来,通过引入反射光图案检查,检查挑战既增加又复杂。反射光使特征的图像对比度反转,从而创建了一组新的设计限制。本文介绍了这些新的反映检查限制。多种平台功能将被纳入反射和透射检查功能的研究中。将探讨将透射光和反射光图案检查相结合到制造中的好处和挑战。航空影像测量系统(AIMS)分析将用于帮助理解如何利用增强的检查功能,同时避免对OPC的不必要限制。

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